When a current ii flows in a flat conductor immersed in a magnetic field B\vec{B} perpendicular to the plane of the current, a transverse potential difference appears: this is the Hall effect (Edwin Hall, 1879).

Hall effect: the current in a transverse field accumulates charges on one edge, creating a voltage ΔVH\Delta V_H perpendicular to the current.

Physical explanation. The current is due to charge carriers qq (positive or negative depending on the material) with drift velocity vdv_d. On each of them the Lorentz force F=qvd×B\vec{F} = q\,\vec{v}_d\times\vec{B} acts, pushing them towards one edge of the conductor. The charges accumulated there create a transverse electric field EH\vec{E}_H which, at steady state, balances the magnetic force:

qEH=qvdBVH=vdBwq\,E_H = q\,v_d\,B \quad\Longrightarrow\quad \ev{V_H = v_d\,B\,w}

where ww is the width of the conductor. Substituting vd=i/(neA)v_d = i/(n\,e\,A), with nn the carrier density and A=wtA = w\,t the cross-section (tt thickness):

VH=iBnetV_H = \frac{i\,B}{n\,e\,t}

Key formula — Hall effect

VH=iBnetV_H = \frac{iB}{net} RH=1/(ne)R_H = 1/(ne): Hall coefficient, depends only on the material. The sign of VHV_H reveals the sign of the carriers’ charge.

Principle — Consequences of the Hall effect

  • It provides a direct measurement of nn (carrier density) and of the sign of the charge: in some semiconductors VHV_H has the opposite sign to that predicted for electrons, indicating effective positive carriers (holes).
  • Hall probes are used everywhere B\vec{B} needs to be measured electronically: brushless motors, automotive ABS sensors, magnetic pedals, guitar pickups.
  • On the micro scale, the quantum Hall effect (von Klitzing, 1980; Nobel 1985) shows that at low temperatures and intense fields VHV_H is quantised in integer or fractional multiples of h/e2h/e^2, defining the primary standard of resistance (RK=h/e225812  ΩR_K = h/e^2 \approx 25\,812\;\Omega).

Example — Laboratory Hall probe

An indium antimonide (InSb) sheet has thickness t=0.1  mmt = 0.1\;\text{mm}, width w=5  mmw = 5\;\text{mm} and carrier density n=2.51022  m3n = 2.5\cdot 10^{22}\;\text{m}^{-3}. With i=100  mAi = 100\;\text{mA} in a field B=0.5  TB = 0.5\;\text{T}: VH=iBnet=0.10.52.510221.610191040.125  V=125  mVV_H = \frac{iB}{net} = \frac{0.1\cdot 0.5}{2.5\cdot 10^{22}\cdot 1.6\cdot 10^{-19}\cdot 10^{-4}} \approx 0.125\;\text{V} = 125\;\text{mV} Easily measurable with a standard voltmeter. In a metal (n1029  m3n \approx 10^{29}\;\text{m}^{-3}) the same configuration would give VH30  μVV_H \sim 30\;\mu\text{V}: this is why Hall probes are made with semiconductors, not metals — few carriers, large voltage.

Summary

Hall: VH=iB/(net)V_H = iB/(net). It measures BB, nn and the sign of the carriers. Hall probes are the most widespread magnetometer in the world.

Collegamenti

Argomenti: Magnetismo Concetti: Effetto Hall · Forza di Lorentz

Esercizi collegati: Worked exercise — charge in an outward field · Cyclotron frequency of a proton · Ranking the Lorentz force (four angles)